Emission of terahertz-frequency electromagnetic radiation from indium phosphide under excitation by short pulses of near-infrared radiation

摘要

We have examined the emission of terahertz-frequency radiation from indium phosphide (InP) under ultrashort pulses of near-infrared radiation. We have investigated nominally undoped, as well as p-doped and n-doped material. Compared to the emitter Indium Arsenide (InAs) we find that the total THz field from undoped InP is an order of magnitude less, but with the strength shifted to higher frequencies.